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| Datasheet File OCR Text: |
| July 1996 NDP4060 / NDB4060 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 15A, 60V. RDS(ON) = 0.10 @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ___________________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) T C = 25C unles otherwise noted NDP4060 60 60 20 40 15 45 50 0.33 -65 to 175 275 NDB4060 Units V V V Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed A PD TJ,TSTG TL Total Power Dissipation Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds W W/C C C (c) 1997 Fairchild Semiconductor Corporation NDP4060 Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 25 V, ID = 15 A 40 15 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 60 V, VGS = 0 V TJ = 125C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 A TJ = 125C Static Drain-Source On-Resistance VGS = 10 V, ID = 7.5 A TJ = 125C On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 10 V VDS = 10 V, ID = 7.5 A VDS = 25, VGS = 0 V, f = 1.0 MHz 15 3 5.7 2 1.4 3 2.4 0.078 0.12 60 250 1 100 -100 V A mA nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage 4 3.6 0.1 0.165 A S V DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 370 165 50 450 200 100 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V ID = 15 A, VGS = 10 V VDD = 30 V, ID = 15 A VGS = 10 V, RGEN = 25 8 70 18 37 12.7 3.2 7 20 100 30 50 17 ns ns ns ns nC nC nC NDP4060 Rev. C Electrical Characteristics (TC = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS ISM VSD Maximum Continuos Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Source-Drain Diode Forward Voltage VGS = 0 V, IS = 7.5 A (Note 1) TJ = 125C trr Irr Reverse Recovery Time Reverse Recovery Current VGS = 0 V, IF = 15 A, dIF/dt = 100 A/s 25 1.5 0.95 0.88 46 3.4 15 45 1.3 1.2 100 7 ns A A A V THERMAL CHARACTERISTICS RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 3 62.5 C/W C/W Note: 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDP4060 Rev. C Typical Electrical Characteristics 30 2 V GS = 2 0 V I D , DRAIN-SOURCE CURRENT (A) 25 12 DRAIN-SOURCE ON-RESISTANCE 10 9.0 R DS(on) , NORMALIZED 1.8 1.6 1.4 1.2 1 0.8 0.6 VGS = 6.0V 7.0 8.0 9.0 10 8.0 20 15 7.0 10 6.0 12 20 5 5.0 0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 0 5 10 15 20 I D , DRAIN CURRENT (A) 25 30 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2.2 3 DRAIN-SOURCE ON-RESISTANCE VGS = 10 V RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 I D = 7.5 A 2.5 VGS = 10 V R DS(ON), NORMALIZED 2 TJ = 125C 1.5 25C 1 -55C 0.5 -25 0 25 50 75 100 125 150 175 0 5 T J, JUNCTION TEMPERATURE (C) 10 15 20 ID , DRAIN CURRENT (A) 25 30 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 20 1.2 V DS = 1 0 V ID , DRAIN CURRENT (A) 15 T = -55C J 25C 125C GATE-SOURCE THRESHOLD VOLTAGE 1.1 VDS = VGS I D = 250A V th , NORMALIZED 1 10 0.9 0.8 5 0.7 0 2 4 6 8 V GS , GATE TO SOURCE VOLTAGE (V) 10 0.6 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (C) 150 175 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. NDP4060 Rev. C Typical Electrical Characteristics (continued) 1.15 20 DRAIN-SOURCE BREAKDOWN VOLTAGE IS , REVERSE DRAIN CURRENT (A) I D = 250A 1.1 VGS = 0V 10 5 BV DSS , NORMALIZED T J = 125C 25C -55C 1.05 2 1 0.5 1 0.95 0.2 0.1 0.4 0.9 -50 -25 0 25 50 75 100 125 T J , JUNCTION TEMPERATURE (C) 150 175 0.6 0.8 1 1.2 1.4 V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 700 500 20 C iss , GATE-SOURCE VOLTAGE (V) 15 I D = 15A V DS = 12V 24V 48V 300 CAPACITANCE (pF) 200 C oss 10 100 f = 1 MHz 50 5 V GS = 0V 30 1 2 3 5 10 20 30 60 V DS , DRAIN TO SOURCE VOLTAGE (V) V 0 0 5 10 Q g , GATE CHARGE (nC) 15 20 C rss Figure 9. Capacitance Characteristics. GS Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT VGS VOUT R GEN 10% 10% INVERTED G 90% S V IN 10% 50% 50% PULSE WIDTH Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDP4060 Rev. C Typical Electrical Characteristics (continued) 8 70 , TRANSCONDUCTANCE (SIEMENS) V DS = 1 5 V 6 TJ = -55C 25C 50 S(O LIM N) IT 10 1m 10 50 0u s 20 RD 125C 4 I D , DRAIN CURRENT (A) s 10 ms V GS = 20V 2 1 DC ms 2 SINGLE PULSE R JC = 3 o C/W T C = 25C 1 2 5 10 30 50 70 g 0 0 2 4 6 8 10 I D , DRAIN CURRENT (A) FS 0.5 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE 0.5 0.3 0.2 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 R JC (t) = r(t) * RJC R JC = 3.0 C/W 0.1 0.05 P(pk) 0.05 0.03 0.02 0.01 0.01 0.02 0.01 Single Pulse t1 t2 TJ - TC = P * R JC (t) Duty Cycle, D = t1 /t2 0.1 0.5 1 5 t1 , TIME (ms) 10 50 100 500 1000 0.05 Figure 15. Transient Thermal Response Curve. NDP4060 Rev. C |
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